SK Hynix aims to start mass production of its 400-layer NAND in late 2025, while 321-layer NAND will enter production in the first half of 2025.
SK Hynix targets higher storage capacity via 400-layer NAND, reaching production by end of 2025 after 321-layer NAND in H1 of 2025
The need for more storage capacity is never-ending, and it looks like SK Hynix is trying to break records with its new plan to prepare 400-layer NAND for future storage drives. Etnews Reports that the company wants to start mass production of this 400-layer NAND by the end of 2025 and wants to transition to large-scale production in the first half of 2026.
However, the process of creating such high-layer NAND is complicated and requires multiple bonding technologies. SK Hynix is already in the process of reviewing new bonding materials and looking at various technologies that will allow different wafers to be connected through methods such as polishing, etching, deposition and wiring.
The entire process requires several steps, such as cell structure design, which focuses on the arrangement of cells in each layer, and stacking. Silicon wafers are then prepared by cleaning and applying thin layers of SiO2 and Si3N4. The process, however, needs careful execution as the layers are stacked one by one through much repetition.
SK Hynix has already achieved 321-layer NANDwhich was unveiled in August 2023, and is expected to begin mass production in 1H 2025. With 400 layers, this will be the company’s first and most advanced NAND product. However, SK Hynix is not the only player in the game. Memory giants like Samsung and Micron are also in the process of increasing the layers on their NAND chips. Although Micron recently introduced a dense 276-layer NANDSamsung has started mass production of a triple-level cell, 9th generation vertical NAND with 290 layers.
At FMS 2024, SK hynix will showcase samples of next-generation AI memory products such as the 12-layer HBM3E, which is expected to go into mass production in the third quarter, and the 321-layer NAND, which is planned to ship starting in the first half of next year.
via SK hynix
Samsung is still aiming higher and is eager to produce NAND with more than 1000 layers by 2030. That said, Japanese company Kioxia is currently at 218 layers 3D NAND with plans to reach 1000 layers before Samsung.
SK Hynix’s approach to achieving 400 layers is to stack the cells on top of the peripherals using the Peripheral Under Cell method. While the peripheral circuits, which control the memory cells, are on the bottom, the memory cells are stacked on top. This method poses a problem of damaging the peripheral circuits, as adding the layers generates more heat and pressure.
Therefore, the company is planning to implement the hybrid bonding method, which involves manufacturing memory cells and peripheral circuits on separate wafers. The wafers will then be bonded together to reduce the risk of damage. Through high layer count, NAND chips can store much more data without increasing in size. This not only saves space for compact systems and increases storage capacity, but also results in more affordable storage solutions.
News Source: Etnews